TwinMOS 8DHE3MN8-HATP 2GB vs Corsair CM4X8GF2400C16N2 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Corsair CM4X8GF2400C16N2 8GB

Corsair CM4X8GF2400C16N2 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值
更快的写入速度，GB/s

870.4 9.4

测试中的平均数值

Corsair CM4X8GF2400C16N2 8GB

需要考虑的原因
Corsair CM4X8GF2400C16N2 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 87

左右 -222% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CM4X8GF2400C16N2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 27
读取速度，GB/s

3,155.6 16.1
写入速度，GB/s

870.4 9.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 2607

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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Kingston 9965525-144.A00LF 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston X5H5PW-MIE 8GB

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