TwinMOS 8DHE3MN8-HATP 2GB vs takeMS International AG TMS1GB264D083805EV 1GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

takeMS International AG TMS1GB264D083805EV 1GB

takeMS International AG TMS1GB264D083805EV 1GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的写入速度，GB/s

870.4 1,500.2

测试中的平均数值

takeMS International AG TMS1GB264D083805EV 1GB

需要考虑的原因
takeMS International AG TMS1GB264D083805EV 1GB

报告一个错误

低于PassMark测试中的延时，ns

47 87

左右 -85% 更低的延时
更快的读取速度，GB/s

4 3

测试中的平均数值
更高的内存带宽，mbps

6400 5300

左右 1.21 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

takeMS International AG TMS1GB264D083805EV 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

87 47
读取速度，GB/s

3,155.6 4,705.9
写入速度，GB/s

870.4 1,500.2
内存带宽，mbps

5300 6400

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

417 460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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