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Crucial Technology CT25664AA800.M16FG 2GB
Apacer Technology 78.BAGMD.AF20B 4GB

Crucial Technology CT25664AA800.M16FG 2GB vs Apacer Technology 78.BAGMD.AF20B 4GB

总分
star star star star star
Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

总分
star star star star star
Apacer Technology 78.BAGMD.AF20B 4GB

Apacer Technology 78.BAGMD.AF20B 4GB

差异 规格 评论

差异

Crucial Technology CT25664AA800.M16FG 2GB 需要考虑的原因
Crucial Technology CT25664AA800.M16FG 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,027.0 left arrow 13.6
    测试中的平均数值
Apacer Technology 78.BAGMD.AF20B 4GB 需要考虑的原因
Apacer Technology 78.BAGMD.AF20B 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 52
    左右 -148% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664AA800.M16FG 2GB
Apacer Technology 78.BAGMD.AF20B 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 21
  • 读取速度，GB/s
    4,837.1 left arrow 18.5
  • 写入速度，GB/s
    2,027.0 left arrow 13.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    794 left arrow 2874

Crucial Technology CT25664AA800.M16FG 2GB RAM的比较

Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FJ 2GB

Apacer Technology 78.BAGMD.AF20B 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
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AMD R538G1601U2S 8GB
Kingston 9965640-004.C00G 16GB
Kingston 9965640-004.C00G 16GB
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Samsung M393B5270CH0-CH9 4GB
Mushkin 99[2/7/4]202F 4GB
Mushkin 99[2/7/4]202F 4GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Kingston ACR26D4U9S8ME-8 8GB
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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
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Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
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Corsair CMR16GX4M2E4266C19 8GB
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AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
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AMD AE34G2139U2 4GB
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Crucial Technology CT32G4SFD832A.M16FB 32GB
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Elpida EBJ40UG8EFU5-GNL-F 4GB
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Kingston ACR32D4U2S8ME-16 16GB
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Kingston 99U5584-001.A00LF 4GB
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Samsung M471A1K43EB1-CWE 8GB
内存RAM
Kingston KHX3333C16D4/16GX 16GB
Kingston KHX3333C16D4/16GX 16GB
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Crucial Technology BL8G32C16U4B.M8FE 8GB
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A-DATA Technology DOVF1B163G2G 2GB
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Corsair CMK16GX4M1C3000C16 16GB
内存RAM
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Nanya Technology NT2GC64B8HC0NS-CG 2GB
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G Skill Intl F4-3200C14-8GTZ 8GB
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Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
内存RAM