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Nanya Technology NT2GC64B8HC0NS-CG 2GB
G Skill Intl F4-3200C14-8GTZ 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs G Skill Intl F4-3200C14-8GTZ 8GB

总分
star star star star star
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分
star star star star star
G Skill Intl F4-3200C14-8GTZ 8GB

G Skill Intl F4-3200C14-8GTZ 8GB

差异 规格 评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 3% 更低的延时
G Skill Intl F4-3200C14-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GTZ 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.9 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GC64B8HC0NS-CG 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 29
  • 读取速度，GB/s
    11.7 left arrow 17.9
  • 写入速度，GB/s
    8.4 left arrow 15.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1578 left arrow 3567

Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-3200C14-8GTZ 8GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Kingston 99U5474-022.A00LF 2GB
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G Skill Intl F4-2800C15-8GRBB 8GB
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内存RAM
Kingston KHX1600C9D3/8G 8GB
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内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
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Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Crucial Technology CB8GU2400.C8D 8GB
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Essencore Limited KD48GU88C-26N1600 8GB
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内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Crucial Technology BLS4G4D26BFSC.8FD2 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
内存RAM
Kingston 9905403-011.A03LF 2GB
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Crucial Technology CT4G4DFS824A.C8FE 4GB
内存RAM
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Kingston 9965433-034.A00LF 4GB
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Corsair CM4X4GF2133C15S2 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM