Crucial Technology CT25664AA800.M16FG 2GB vs Micron Technology 4ATF51264HZ-2G3E2 4GB

总分

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

总分

Micron Technology 4ATF51264HZ-2G3E2 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FG 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FG 2GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值
更快的写入速度，GB/s

2,027.0 12.2

测试中的平均数值

Micron Technology 4ATF51264HZ-2G3E2 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3E2 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 52

左右 -79% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FG 2GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 29
读取速度，GB/s

4,837.1 15.8
写入速度，GB/s

2,027.0 12.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

794 2865

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M323R2GA3BB0-CQKOD 16GB

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Samsung M378B5773DH0-CH9 2GB

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Wilk Elektronik S.A. W-HK26S16G 16GB