Crucial Technology CT25664AA800.M16FM 2GB vs Crucial Technology BL8G32C16U4WL.M8FE1 8GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

更快的读取速度，GB/s

5 21.2

测试中的平均数值
更快的写入速度，GB/s

2,135.0 16.4

测试中的平均数值

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4WL.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 51

左右 -96% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 26
读取速度，GB/s

5,021.4 21.2
写入速度，GB/s

2,135.0 16.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

855 3755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Absolute Latency

0 ns

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Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

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Crucial Technology BL8G32C16U4WL.M8FE1 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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Team Group Inc. 16GB

Team Group Inc. 16GB

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Samsung M471A1G44AB0-CWE 8GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMR16GX4M2A2666C16 8GB

Corsair CMR16GX4M2A2666C16 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston 9905403-156.A00LF 2GB

Asgard VMA45UG-MEC1U2BQ2 8GB

Asgard VMA45UG-MEC1U2BQ2 8GB