Crucial Technology CT25664AA800.M16FM 2GB vs Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

更快的读取速度，GB/s

5 15

测试中的平均数值
更快的写入速度，GB/s

2,135.0 11.4

测试中的平均数值

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 51

左右 -70% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 30
读取速度，GB/s

5,021.4 15.0
写入速度，GB/s

2,135.0 11.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

855 2628

RAM Latency Calculator

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RAM 2

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最新比较

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SK Hynix HYMP164U64CP6-Y5 512MB

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Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

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G Skill Intl F4-2666C15-16GVR 16GB

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Mushkin 99[2/7/4]209F 8GB

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G Skill Intl F4-3200C16-8GVKB 8GB

G Skill Intl F4-3200C16-8GVKB 8GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

G Skill Intl F4-2666C19-16GRS 16GB

G Skill Intl F4-2666C19-16GRS 16GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMA451R7AFR8N-UH 4GB

SK Hynix HMA451R7AFR8N-UH 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

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G Skill Intl F4-2400C16-8GFX 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

Kingston HP32D4U8S8ME-8X 8GB

Kingston HP32D4U8S8ME-8X 8GB