Crucial Technology CT25664AA800.M16FM 2GB vs G Skill Intl F4-2666C15-4GVK 4GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

更快的读取速度，GB/s

5 15.9

测试中的平均数值
更快的写入速度，GB/s

2,135.0 11.8

测试中的平均数值

G Skill Intl F4-2666C15-4GVK 4GB

需要考虑的原因
G Skill Intl F4-2666C15-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 51

左右 -113% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-2666C15-4GVK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 24
读取速度，GB/s

5,021.4 15.9
写入速度，GB/s

2,135.0 11.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

855 2508

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire CL14-14-14 D4-2400 16GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Micron Technology 18ADF1G72PZ-2G1A1 8GB

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Kingston 99U5584-005.A00LF 4GB

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G Skill Intl F4-2666C19-8GRS 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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PNY Electronics PNY 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Golden Empire CL15-15-15 D4-2666 4GB

Golden Empire CL15-15-15 D4-2666 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Apacer Technology 78.C1GMM.BAC0B 8GB