Crucial Technology CT25664AA800.M16FM 2GB vs Kingston KCDT82-MIE 4GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

更快的读取速度，GB/s

5 17

测试中的平均数值
更快的写入速度，GB/s

2,135.0 12.5

测试中的平均数值

Kingston KCDT82-MIE 4GB

需要考虑的原因
Kingston KCDT82-MIE 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 51

左右 -34% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

Kingston KCDT82-MIE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 38
读取速度，GB/s

5,021.4 17.0
写入速度，GB/s

2,135.0 12.5
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

855 2302

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston 9905713-030.A00G 8GB

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Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Kingston 9905678-014.A00G 4GB

Kingston 9905678-014.A00G 4GB

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Samsung M378B5673FH0-CH9 2GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMW16GX4M2K3600C16 8GB

Corsair CMW16GX4M2K3600C16 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

Crucial Technology CT4G4DFS8213.M8FB 4GB