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Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 9905625-004.A03LF 8GB
比较
Crucial Technology CT25664AA800.M16FM 2GB vs Micron Technology 9905625-004.A03LF 8GB
总分
Crucial Technology CT25664AA800.M16FM 2GB
总分
Micron Technology 9905625-004.A03LF 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB
报告一个错误
更快的读取速度,GB/s
5
17.4
测试中的平均数值
更快的写入速度,GB/s
2,135.0
11.7
测试中的平均数值
需要考虑的原因
Micron Technology 9905625-004.A03LF 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
51
左右 -96% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 9905625-004.A03LF 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
51
26
读取速度,GB/s
5,021.4
17.4
写入速度,GB/s
2,135.0
11.7
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
855
2806
Crucial Technology CT25664AA800.M16FM 2GB RAM的比较
Kingston 9905471-006.A01LF 4GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
Micron Technology 9905625-004.A03LF 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hexon Technology Pte Ltd HEXON 1GB
Samsung M393A1K43BB0-CRC 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 9905625-004.A03LF 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Samsung M393B1G70QH0-YK0 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
A-DATA Technology AD73I1C1674EV 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Samsung M471B5273DH0-CH9 4GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kingston LV32D4U2S8HD-8X 8GB
Samsung 1600 CL10 Series 8GB
Hewlett-Packard 7EH64AA#ABC 8GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
Samsung M471A5244CB0-CWE 4GB
Apacer Technology 78.C2GFP.C700B 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C14-16GTZKW 16GB
PNY Electronics PNY 2GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
报告一个错误
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