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Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB

Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
Micron Technology 36ASF4G72PZ-2G1A1 32GB 需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1A1 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 77
    左右 -108% 更低的延时
  • 更快的读取速度，GB/s
    9.6 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 37
  • 读取速度，GB/s
    3,405.2 left arrow 9.6
  • 写入速度，GB/s
    2,622.0 left arrow 7.8
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2082

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Golden Empire CL18-20-20 D4-3200 8GB
Golden Empire CL18-20-20 D4-3200 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
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Kingston 9905630-005.A00G 8GB
Kingston 9905630-005.A00G 8GB
内存RAM
Kingston ACR16D3LS1KNG/8G 8GB
Kingston ACR16D3LS1KNG/8G 8GB
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Kingston 9905701-018.A00G 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CMK16GX4M2F4400C19 8GB
Corsair CMK16GX4M2F4400C19 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Essencore Limited KD48GU880-26N160T 8GB
Essencore Limited KD48GU880-26N160T 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
Crucial Technology CT16G4SFD8213.C16FBR 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
V-GEN D4H8GL26A8TS6 8GB
V-GEN D4H8GL26A8TS6 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3600C19-16GTRS 16GB
G Skill Intl F4-3600C19-16GTRS 16GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-4266C17-8GTZR 8GB
G Skill Intl F4-4266C17-8GTZR 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMR64GX4M4C3333C16 16GB
Corsair CMR64GX4M4C3333C16 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-3600C17-4GTZ 4GB
G Skill Intl F4-3600C17-4GTZ 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
内存RAM