Crucial Technology CT25664BA160B.C16F 2GB vs Corsair CMW16GX4M2Z3200C16 8GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Corsair CMW16GX4M2Z3200C16 8GB

Corsair CMW16GX4M2Z3200C16 8GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 6% 更低的延时

Corsair CMW16GX4M2Z3200C16 8GB

需要考虑的原因
Corsair CMW16GX4M2Z3200C16 8GB

报告一个错误

更快的读取速度，GB/s

18.4 14.3

测试中的平均数值
更快的写入速度，GB/s

14.2 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Corsair CMW16GX4M2Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 31
读取速度，GB/s

14.3 18.4
写入速度，GB/s

10.1 14.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2227 3500

RAM Latency Calculator

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最新比较

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMW16GX4M2D3600C16 8GB

Corsair CMW16GX4M2D3600C16 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Corsair CMW16GX4M2Z3200C16 8GB

Corsair CMW16GX4M2Z3200C16 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3000C16-16GTRG 16GB

G Skill Intl F4-3000C16-16GTRG 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Corsair CMSO8GX3M1C1600C11 8GB

Corsair CMSO8GX3M1C1600C11 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-4000C16-16GTZR 16GB

G Skill Intl F4-4000C16-16GTZR 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Asgard VMA42UG-MEC1U2AW1 8GB

Asgard VMA42UG-MEC1U2AW1 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-3600C19-16GSXK 16GB

G Skill Intl F4-3600C19-16GSXK 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-2400C15-4GRB 4GB

G Skill Intl F4-2400C15-4GRB 4GB