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Crucial Technology CT25664BA160B.C16F 2GB
Heoriady M378B5273DH0-CK0 4GB
比较
Crucial Technology CT25664BA160B.C16F 2GB vs Heoriady M378B5273DH0-CK0 4GB
总分
Crucial Technology CT25664BA160B.C16F 2GB
总分
Heoriady M378B5273DH0-CK0 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
更快的写入速度,GB/s
10.1
9.7
测试中的平均数值
需要考虑的原因
Heoriady M378B5273DH0-CK0 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
29
左右 -12% 更低的延时
更快的读取速度,GB/s
15.3
14.3
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Heoriady M378B5273DH0-CK0 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
29
26
读取速度,GB/s
14.3
15.3
写入速度,GB/s
10.1
9.7
内存带宽,mbps
12800
12800
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
2227
2347
Crucial Technology CT25664BA160B.C16F 2GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB RAM的比较
Crucial Technology BL16G36C16U4B.M16FE1 16GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M393B2G70BH0-CK0 16GB
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Micron Technology 9905625-004.A03LF 8GB
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Corsair CMD32GX3M4A2400C10 8GB
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Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C
Kingston 99U5471-012.A00LF 4GB
A-DATA Technology AD5U48008G-B 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT51264BF160B.D16F 4GB
报告一个错误
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Bug description
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