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Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-2133C15-8GFT 8GB

Crucial Technology CT25664BA160B.C16F 2GB vs G Skill Intl F4-2133C15-8GFT 8GB

总分
star star star star star
Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
G Skill Intl F4-2133C15-8GFT 8GB

G Skill Intl F4-2133C15-8GFT 8GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
G Skill Intl F4-2133C15-8GFT 8GB 需要考虑的原因
G Skill Intl F4-2133C15-8GFT 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 29
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-2133C15-8GFT 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 24
  • 读取速度，GB/s
    14.3 left arrow 15.6
  • 写入速度，GB/s
    10.1 left arrow 10.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 2736

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

G Skill Intl F4-2133C15-8GFT 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Elpida EBJ81UG8BBU0-GN-F 8GB
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A-DATA Technology AO1P32MC8T1-BW3S 8GB
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内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
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G Skill Intl F4-2133C15-8GFT 8GB
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Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
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内存RAM
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Samsung M378A1G43DB0-CPB 8GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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Kingston KY7N41-MID 8GB
内存RAM