Crucial Technology CT25664BA160B.C16F 2GB vs G Skill Intl F4-2800C16-8GVG 8GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

G Skill Intl F4-2800C16-8GVG 8GB

G Skill Intl F4-2800C16-8GVG 8GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 6% 更低的延时

G Skill Intl F4-2800C16-8GVG 8GB

需要考虑的原因
G Skill Intl F4-2800C16-8GVG 8GB

报告一个错误

更快的读取速度，GB/s

16.3 14.3

测试中的平均数值
更快的写入速度，GB/s

11.8 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

G Skill Intl F4-2800C16-8GVG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 31
读取速度，GB/s

14.3 16.3
写入速度，GB/s

10.1 11.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2227 2918

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C14-8GVK 8GB

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Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Kingston 9905469-153.A00LF 4GB

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Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

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Essencore Limited KD48GU880-32A160X 8GB

Essencore Limited KD48GU880-32A160X 8GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Corsair CM4X16GE2133C13K8 16GB

Corsair CM4X16GE2133C13K8 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Samsung M471A5143SB1-CRC 4GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Wilk Elektronik S.A. GY2666D464L16S/8G 8GB