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Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3466C16-4GTZ 4GB

Crucial Technology CT25664BA160B.C16F 2GB vs G Skill Intl F4-3466C16-4GTZ 4GB

总分
star star star star star
Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
G Skill Intl F4-3466C16-4GTZ 4GB

G Skill Intl F4-3466C16-4GTZ 4GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
G Skill Intl F4-3466C16-4GTZ 4GB 需要考虑的原因
G Skill Intl F4-3466C16-4GTZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 29
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    20 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3466C16-4GTZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 19
  • 读取速度，GB/s
    14.3 left arrow 20.0
  • 写入速度，GB/s
    10.1 left arrow 15.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 3192

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

G Skill Intl F4-3466C16-4GTZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
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内存RAM
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内存RAM
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