Crucial Technology CT25664BA160B.C16F 2GB vs Kingston KHX4800C19D4/8GX 8GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Kingston KHX4800C19D4/8GX 8GB

Kingston KHX4800C19D4/8GX 8GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

Kingston KHX4800C19D4/8GX 8GB

需要考虑的原因
Kingston KHX4800C19D4/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 -16% 更低的延时
更快的读取速度，GB/s

18.2 14.3

测试中的平均数值
更快的写入速度，GB/s

17.4 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Kingston KHX4800C19D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 25
读取速度，GB/s

14.3 18.2
写入速度，GB/s

10.1 17.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2227 3848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology BLS4G4D240FSB.8FARG? 4GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Samsung M393B1G70BH0-CK0 8GB

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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

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Kingston 9905633-017.A00G 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

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Essencore Limited IM48GU48N28-GGGHM 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB