Crucial Technology CT25664BA160B.C16F 2GB vs Ramaxel Technology RMSA3330ME88HCF-3200 32GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 55

左右 47% 更低的延时

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

需要考虑的原因
Ramaxel Technology RMSA3330ME88HCF-3200 32GB

报告一个错误

更快的读取速度，GB/s

16.3 14.3

测试中的平均数值
更快的写入速度，GB/s

12.3 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 55
读取速度，GB/s

14.3 16.3
写入速度，GB/s

10.1 12.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2227 2653

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMA451U6AFR8N-TF 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology CT4G4SFS824A.C8FBD2 4GB

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G Skill Intl F4-4266C19-8GTZSW 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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G Skill Intl F4-3200C15-16GTZSW 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

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Kingston XRMWRN-HYA 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB