RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT25664BA160B.C16F 2GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
比较
Crucial Technology CT25664BA160B.C16F 2GB vs Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
总分
Crucial Technology CT25664BA160B.C16F 2GB
总分
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 -7% 更低的延时
更快的读取速度,GB/s
20.6
14.3
测试中的平均数值
更快的写入速度,GB/s
18.4
10.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
27
读取速度,GB/s
14.3
20.6
写入速度,GB/s
10.1
18.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2227
3826
Crucial Technology CT25664BA160B.C16F 2GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5173BH0-CH9 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Unifosa Corporation HU564404EP0200 4GB
Samsung M393A2K40BB0-CPB 16GB
Corsair CML16GX3M2A1600C10 8GB
Kingston KHX2400C14S4/4G 4GB
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KHX3600C17D4/16GX 16GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M393A5143DB0-CRC 4GB
Asgard VMA45UG-MEC1U2AW1 8GB
Panram International Corporation W4N2666PS-8G 8GB
Kingston 9965525-018.A00LF 4GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
Samsung M393B5270CH0-CH9 4GB
Apacer Technology 78.CAGP7.AFW0C 8GB
SK Hynix HMT425S6AFR6A-PB 2GB
G Skill Intl F4-3200C16-16GVK 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
报告一个错误
×
Bug description
Source link