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Crucial Technology CT2K102464BD160B 8GB
Kingston KHX4266C19D4/8GX 8GB

Crucial Technology CT2K102464BD160B 8GB vs Kingston KHX4266C19D4/8GX 8GB

总分
star star star star star
Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

总分
star star star star star
Kingston KHX4266C19D4/8GX 8GB

Kingston KHX4266C19D4/8GX 8GB

差异 规格 评论

差异

Crucial Technology CT2K102464BD160B 8GB 需要考虑的原因
Crucial Technology CT2K102464BD160B 8GB
报告一个错误
Kingston KHX4266C19D4/8GX 8GB 需要考虑的原因
Kingston KHX4266C19D4/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 38
    左右 -41% 更低的延时
  • 更快的读取速度，GB/s
    18.6 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.8 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT2K102464BD160B 8GB
Kingston KHX4266C19D4/8GX 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 27
  • 读取速度，GB/s
    15.6 left arrow 18.6
  • 写入速度，GB/s
    9.8 left arrow 16.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2566 left arrow 3758

Crucial Technology CT2K102464BD160B 8GB RAM的比较

A-DATA Technology AE4S240038G17-BHYA 8GB
INTENSO M418039 8GB

Kingston KHX4266C19D4/8GX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
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Kingston KF3600C18D4/16GX 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
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G Skill Intl F4-4266C17-8GTZRB 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
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Crucial Technology BLS4G4D240FSE.8FE 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
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Corsair CMK32GX4M4K4333C19 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3600C16-8GVK 8GB
G Skill Intl F4-3600C16-8GVK 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
SK Hynix HMA82GU6DJR8N-VK 16GB
SK Hynix HMA82GU6DJR8N-VK 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
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Kingston 9965745-002.A00G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Corsair CMW128GX4M4D3600C18 32GB
Corsair CMW128GX4M4D3600C18 32GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3600C19-8GSXK 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
内存RAM
AMD R5S38G1601U2S 8GB
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Crucial Technology CT8G4SFS8266.M8FE 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMK16GX4M4A2133C15 4GB
内存RAM