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Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
比较
Crucial Technology CT51264AC800.C16FC 4GB vs Crucial Technology BLS8G4D240FSC.M16FAD 8GB
总分
Crucial Technology CT51264AC800.C16FC 4GB
总分
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB
报告一个错误
更快的读取速度,GB/s
4
16.8
测试中的平均数值
更快的写入速度,GB/s
2,378.6
13.3
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
62
左右 -182% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
62
22
读取速度,GB/s
4,670.6
16.8
写入速度,GB/s
2,378.6
13.3
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
861
3097
Crucial Technology CT51264AC800.C16FC 4GB RAM的比较
Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M4 70T2864QZ3-CF7 1GB
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Kingston KHX2133C14S4/16G 16GB
Corsair CML8GX3M2A1600C9 4GB
Samsung M471A2K43EB1-CWE 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M471A2K43BB1-CRC 16GB
报告一个错误
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