Crucial Technology CT51264AC800.C16FC 4GB vs Kingston XJV223-MIE 16GB

总分

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分

Kingston XJV223-MIE 16GB

Kingston XJV223-MIE 16GB

差异规格评论

差异

Crucial Technology CT51264AC800.C16FC 4GB

需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB

报告一个错误

更快的读取速度，GB/s

4 17.2

测试中的平均数值
更快的写入速度，GB/s

2,378.6 11.3

测试中的平均数值

Kingston XJV223-MIE 16GB

需要考虑的原因
Kingston XJV223-MIE 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 62

左右 -59% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264AC800.C16FC 4GB

Kingston XJV223-MIE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 39
读取速度，GB/s

4,670.6 17.2
写入速度，GB/s

2,378.6 11.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

861 3127

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD8GX4M2B3200C16 4GB

Corsair CMD8GX4M2B3200C16 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

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