PNY Electronics PNY 2GB vs Kingston KHX2400C1C14/16G 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Kingston KHX2400C1C14/16G 16GB

Kingston KHX2400C1C14/16G 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时
更快的写入速度，GB/s

8.4 7.9

测试中的平均数值

Kingston KHX2400C1C14/16G 16GB

需要考虑的原因
Kingston KHX2400C1C14/16G 16GB

报告一个错误

更快的读取速度，GB/s

15.6 13.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Kingston KHX2400C1C14/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.8 15.6
写入速度，GB/s

8.4 7.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 2244

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64HZ-2G6B1 8GB

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Kingston MSI24D4U7S8MB-8 8GB

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G Skill Intl F4-3000C16-16GTZN 16GB

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PNY Electronics PNY 2GB

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Kingston KHX2400C1C14/16G 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CM4B4G1J2400A14K 4GB

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Kllisre KRE-D3U1600M/8G 8GB

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Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Corsair CM4X16GE2400C16S4 16GB

Corsair CM4X16GE2400C16S4 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

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Kingston KYXC0V-MIH 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-4000C19-8GTZ 8GB

G Skill Intl F4-4000C19-8GTZ 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CM4X4GF2133C15S2 4GB

Corsair CM4X4GF2133C15S2 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Smart Modular SF4641G8CKHI6DFSEG 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M474A4G43MB1-CTD 32GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

MemxPro Inc. D4S8GHIOFFC 8GB

MemxPro Inc. D4S8GHIOFFC 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Apacer Technology GD2.1527WC.001 8GB

Apacer Technology GD2.1527WC.001 8GB