PNY Electronics PNY 2GB vs Kingston KHX2400C1C14/16G 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Kingston KHX2400C1C14/16G 16GB

Kingston KHX2400C1C14/16G 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时
更快的写入速度，GB/s

8.4 7.9

测试中的平均数值

Kingston KHX2400C1C14/16G 16GB

需要考虑的原因
Kingston KHX2400C1C14/16G 16GB

报告一个错误

更快的读取速度，GB/s

15.6 13.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Kingston KHX2400C1C14/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.8 15.6
写入速度，GB/s

8.4 7.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 2244

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905625-066.A00G 16GB

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Kingston KHX2133C13D4/4GX 4GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston ACR24D4U7S8MB-8 8GB