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Crucial Technology CT51264AC800.C16FC 4GB
Samsung V-GeN D4S8GL32A8TL 8GB

Crucial Technology CT51264AC800.C16FC 4GB vs Samsung V-GeN D4S8GL32A8TL 8GB

总分
star star star star star
Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分
star star star star star
Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

差异 规格 评论

差异

Crucial Technology CT51264AC800.C16FC 4GB 需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    62 left arrow 64
    左右 3% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 16.8
    测试中的平均数值
Samsung V-GeN D4S8GL32A8TL 8GB 需要考虑的原因
Samsung V-GeN D4S8GL32A8TL 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.3 left arrow 2,378.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
Samsung V-GeN D4S8GL32A8TL 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 64
  • 读取速度，GB/s
    4,670.6 left arrow 16.8
  • 写入速度，GB/s
    2,378.6 left arrow 8.3
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    861 left arrow 2052

Crucial Technology CT51264AC800.C16FC 4GB RAM的比较

Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB

Samsung V-GeN D4S8GL32A8TL 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston KVR533D2N4 512MB
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内存RAM
A-DATA Technology AD73I1B1672EG 2GB
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内存RAM
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G Skill Intl F4-3200C16-8GRKB 8GB
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内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
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Corsair CMV8GX4M1A2400C16 8GB
内存RAM