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Crucial Technology CT51264BA1339.C16F 4GB
AMD R744G2606U1S 4GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs AMD R744G2606U1S 4GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
AMD R744G2606U1S 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
76
左右 64% 更低的延时
需要考虑的原因
AMD R744G2606U1S 4GB
报告一个错误
更快的读取速度,GB/s
15.7
13.9
测试中的平均数值
更快的写入速度,GB/s
8.7
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
AMD R744G2606U1S 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
76
读取速度,GB/s
13.9
15.7
写入速度,GB/s
8.4
8.7
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
1809
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
AMD R744G2606U1S 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-3000C16-16GSXFB 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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Elpida EBJ17RG4EFWA-DJ-F 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Samsung M3 78T5663RZ3-CE6 2GB
Avant Technology W6451U66J5213ND 4GB
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Crucial Technology CT16G4DFRA32A.C16FP 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Kingston 99U5584-005.A00LF 4GB
Samsung M393A2G40EB1-CRC 16GB
Peak Electronics 256X64M-67E 2GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
报告一个错误
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Bug description
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