Crucial Technology CT51264BA1339.C16F 4GB vs Asgard VMA44UG-MEC1U2AW1 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Asgard VMA44UG-MEC1U2AW1 8GB

Asgard VMA44UG-MEC1U2AW1 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 61

左右 56% 更低的延时

Asgard VMA44UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA44UG-MEC1U2AW1 8GB

报告一个错误

更快的读取速度，GB/s

17.2 13.9

测试中的平均数值
更快的写入速度，GB/s

8.9 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Asgard VMA44UG-MEC1U2AW1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 61
读取速度，GB/s

13.9 17.2
写入速度，GB/s

8.4 8.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2251 2089

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston SMD4-S8G48HJ-26V 8GB

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Samsung M471A2K43CB1-CTCT 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Smart Modular SMS4WEC8C1K0446FCG 8GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Apacer Technology 78.D2GG7.AU30B 16GB

Apacer Technology 78.D2GG7.AU30B 16GB

G Skill Intl F3-2400C11-8GSR 8GB

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Transcend Information JM3200HLB-16GK 8GB

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Crucial Technology CT51264BA1339.D16F 4GB

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Kingston KH280C14D4/8X 8GB