Crucial Technology CT51264BA1339.C16F 4GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Crucial Technology CT51264BA1339.C16F 4GB vs Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 27

左右 -50% 更低的延时
更快的读取速度，GB/s

20.8 13.9

测试中的平均数值
更快的写入速度，GB/s

15.1 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 18
读取速度，GB/s

13.9 20.8
写入速度，GB/s

8.4 15.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3402

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3600C16-8GTESC 8GB

G Skill Intl F4-3600C16-8GTESC 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology 8G4US2400.M8B1 8GB

Crucial Technology 8G4US2400.M8B1 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMT32GX4M2Z3600C18 16GB

Corsair CMT32GX4M2Z3600C18 16GB