RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.C16F 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
需要考虑的原因
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
27
左右 -8% 更低的延时
更快的读取速度,GB/s
15.4
13.9
测试中的平均数值
更快的写入速度,GB/s
13.4
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
25
读取速度,GB/s
13.9
15.4
写入速度,GB/s
8.4
13.4
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
2786
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BA1339.C16F 4GB
Apacer Technology 78.CAGPE.AUF0B 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Kingston 9905403-515.A00LF 8GB
Corsair CMW32GX4M2C3200C16 16GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3400C16-16GVR 16GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-3866C18-4GTZ 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Samsung M471B5173DB0-YK0 4GB
Corsair CMW128GX4M4D3000C16 32GB
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology DDR4 3600 2OZ 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
SK Hynix HMT125S6TFR8C-G7 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
AMD R5S38G1601U2S 8GB
Samsung M393A2G40EB1-CRC 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Avant Technology J641GU42J7240N3 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Smart Modular SF4721G8CKHH6DFSDS 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
报告一个错误
×
Bug description
Source link