Crucial Technology CT51264BA1339.C16F 4GB vs Corsair CM4X16GD3200C16K2E 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Corsair CM4X16GD3200C16K2E 16GB

Corsair CM4X16GD3200C16K2E 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Corsair CM4X16GD3200C16K2E 16GB

需要考虑的原因
Corsair CM4X16GD3200C16K2E 16GB

报告一个错误

更快的读取速度，GB/s

14.8 13.9

测试中的平均数值
更快的写入速度，GB/s

11.4 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CM4X16GD3200C16K2E 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.9 14.8
写入速度，GB/s

8.4 11.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3122

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Essencore Limited IM48GU48N24-FFFHM 8GB

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Crucial Technology CT16G4DFD8266.M16FJ 16GB

Samsung M393B2G70BH0-CK0 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Kingston 9905712-010.A00G 16GB

Kingston 9905712-010.A00G 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Corsair CMD16GX4M2C3333C16 8GB

Corsair CMD16GX4M2C3333C16 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Apacer Technology 78.C2GFA.AF30B 8GB

Apacer Technology 78.C2GFA.AF30B 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB