Crucial Technology CT51264BA1339.C16F 4GB vs Corsair CM4X4GF2666Z16K4 4GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Corsair CM4X4GF2666Z16K4 4GB

Corsair CM4X4GF2666Z16K4 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 46

左右 41% 更低的延时
更快的读取速度，GB/s

13.9 11.4

测试中的平均数值

Corsair CM4X4GF2666Z16K4 4GB

需要考虑的原因
Corsair CM4X4GF2666Z16K4 4GB

报告一个错误

更快的写入速度，GB/s

12.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CM4X4GF2666Z16K4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 46
读取速度，GB/s

13.9 11.4
写入速度，GB/s

8.4 12.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2251 2541

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HYMP112U64CP8-Y5 1GB

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Kingston 9905703-008.A00G 16GB

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Kingston 9905469-153.A00LF 4GB

Kingston 9965589-024.D01G 16GB

Kingston 9965589-024.D01G 16GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

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Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB