Crucial Technology CT51264BA1339.C16F 4GB vs Corsair CMK8GX4M2B3200C16 4GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Corsair CMK8GX4M2B3200C16 4GB

Corsair CMK8GX4M2B3200C16 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Corsair CMK8GX4M2B3200C16 4GB

需要考虑的原因
Corsair CMK8GX4M2B3200C16 4GB

报告一个错误

更快的读取速度，GB/s

18.2 13.9

测试中的平均数值
更快的写入速度，GB/s

13.5 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMK8GX4M2B3200C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

13.9 18.2
写入速度，GB/s

8.4 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3015

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Kingston 9905469-143.A00LF 4GB

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Micron Technology 18ASF1G72AZ-2G1A1 8GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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Kingston KF3200C20S4/8G 8GB

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Samsung 1600 CL10 Series 8GB

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Kingston 9905678-033.A00G 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Kingston KF2666C15S4/16G 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3600C18-8GVK 8GB

G Skill Intl F4-3600C18-8GVK 8GB

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Samsung M471B1G73DB0-YK0 8GB

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Kingston HP32D4S2S8ME-16 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Kingston KF3200C16D4/16GX 16GB

Kingston KF3200C16D4/16GX 16GB