Samsung M393B1K70QB0-CK0 8GB vs Kingston 9905702-027.A00G 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Kingston 9905702-027.A00G 8GB

Kingston 9905702-027.A00G 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Kingston 9905702-027.A00G 8GB

需要考虑的原因
Kingston 9905702-027.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 47

左右 -96% 更低的延时
更快的读取速度，GB/s

19.2 10.4

测试中的平均数值
更快的写入速度，GB/s

15.6 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Kingston 9905702-027.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 24
读取速度，GB/s

10.4 19.2
写入速度，GB/s

7.8 15.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2169 3843

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston XCCT36-MIE 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB

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G Skill Intl F4-3800C14-8GTZN 8GB

G Skill Intl F4-3800C14-8GTZN 8GB