Samsung M378B5173EB0-YK0 4GB vs Kllisre 8GB

总分

Samsung M378B5173EB0-YK0 4GB

Samsung M378B5173EB0-YK0 4GB

总分

Kllisre 8GB

Kllisre 8GB

差异规格评论

差异

Samsung M378B5173EB0-YK0 4GB

需要考虑的原因
Samsung M378B5173EB0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 46

左右 11% 更低的延时
更快的读取速度，GB/s

14.1 11.7

测试中的平均数值

Kllisre 8GB

需要考虑的原因
Kllisre 8GB

报告一个错误

更快的写入速度，GB/s

8.6 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173EB0-YK0 4GB

Kllisre 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 46
读取速度，GB/s

14.1 11.7
写入速度，GB/s

8.2 8.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2240 2349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DHE3MN8-HATP 2GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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G Skill Intl F4-3733C17-16GTZR 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Corsair CMK128GX4M4D3600C18 32GB

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Kingston 99U5713-003.A00G 4GB