Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology BL16G26C16U4W.16FD 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Crucial Technology BL16G26C16U4W.16FD 16GB

Crucial Technology BL16G26C16U4W.16FD 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

Crucial Technology BL16G26C16U4W.16FD 16GB

需要考虑的原因
Crucial Technology BL16G26C16U4W.16FD 16GB

报告一个错误

更快的读取速度，GB/s

16.6 13.9

测试中的平均数值
更快的写入速度，GB/s

15.2 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL16G26C16U4W.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

13.9 16.6
写入速度，GB/s

8.4 15.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2251 3477

RAM Latency Calculator

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最新比较

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Crucial Technology BL16G26C16U4W.16FD 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMT325S6CFR8C-PB 2GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMK32GX4M2Z2400C16 16GB

Corsair CMK32GX4M2Z2400C16 16GB