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Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology BLS16G4S240FSD.16FBR 16GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Crucial Technology BLS16G4S240FSD.16FBR 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
31
左右 13% 更低的延时
需要考虑的原因
Crucial Technology BLS16G4S240FSD.16FBR 16GB
报告一个错误
更快的读取速度,GB/s
14.3
13.9
测试中的平均数值
更快的写入速度,GB/s
10.0
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
31
读取速度,GB/s
13.9
14.3
写入速度,GB/s
8.4
10.0
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
2408
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M323R2GA3BB0-CQKOD 16GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Samsung M471B5173DB0-YK0 4GB
Golden Empire CL19-25-25 D4-4000 4GB
报告一个错误
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Bug description
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