Samsung M323R2GA3BB0-CQKOD 16GB vs Crucial Technology BLS16G4D26BFSE.16FE 16GB

总分

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

总分

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

差异规格评论

差异

Samsung M323R2GA3BB0-CQKOD 16GB

需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB

报告一个错误

Crucial Technology BLS16G4D26BFSE.16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D26BFSE.16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 25

左右 -14% 更低的延时
更快的读取速度，GB/s

16.9 13.4

测试中的平均数值
更快的写入速度，GB/s

13.7 12.1

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Samsung M323R2GA3BB0-CQKOD 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

25 22
读取速度，GB/s

13.4 16.9
写入速度，GB/s

12.1 13.7
内存带宽，mbps

19200 21300

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

no data / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3419 3139

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix V-GeN D4H4GL26A8TL5 4GB