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Corsair CMSX32GX4M2A3200C22 16GB
Samsung M323R2GA3BB0-CQKOD 16GB

Corsair CMSX32GX4M2A3200C22 16GB vs Samsung M323R2GA3BB0-CQKOD 16GB

总分
star star star star star
Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

总分
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

差异 规格 评论

差异

Corsair CMSX32GX4M2A3200C22 16GB 需要考虑的原因
Corsair CMSX32GX4M2A3200C22 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.3 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 12.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Samsung M323R2GA3BB0-CQKOD 16GB 需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 41
    左右 -64% 更低的延时

规格

完整的技术规格清单
Corsair CMSX32GX4M2A3200C22 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR5
  • PassMark中的延时，ns
    41 left arrow 25
  • 读取速度，GB/s
    16.3 left arrow 13.4
  • 写入速度，GB/s
    13.5 left arrow 12.1
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    3146 left arrow 3419

Corsair CMSX32GX4M2A3200C22 16GB RAM的比较

Samsung M471A4G43AB1-CWE 32GB
Kingston KHX4000C19D4/8GX 8GB

Samsung M323R2GA3BB0-CQKOD 16GB RAM的比较

Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Corsair CMSX32GX4M2A3200C22 16GB
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Samsung M323R2GA3BB0-CQKOD 16GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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内存RAM
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Hewlett-Packard 7EH64AA# 8GB
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内存RAM
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内存RAM
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内存RAM
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Micron Technology 9ASF51272AZ-2G3B1 4GB
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