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Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M323R2GA3BB0-CQKOD 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB vs Samsung M323R2GA3BB0-CQKOD 16GB

总分
star star star star star
Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

差异 规格 评论

差异

Micron Technology 36ASF2G72PZ-2G1A2 16GB 需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB
报告一个错误
Samsung M323R2GA3BB0-CQKOD 16GB 需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 52
    左右 -108% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17500
    左右 1.1 更高的带宽

规格

完整的技术规格清单
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR5
  • PassMark中的延时，ns
    52 left arrow 25
  • 读取速度，GB/s
    10.2 left arrow 13.4
  • 写入速度，GB/s
    8.2 left arrow 12.1
  • 内存带宽，mbps
    17500 left arrow 19200
Other
  • 描述
    PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • 时序/时钟速度
    no data left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    2319 left arrow 3419

Micron Technology 36ASF2G72PZ-2G1A2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M323R2GA3BB0-CQKOD 16GB RAM的比较

Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
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