Samsung M393B1K70QB0-CK0 8GB vs G Skill Intl F4-3200C16-16GRS 16GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

G Skill Intl F4-3200C16-16GRS 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

19 47

左右 -147% 更低的延时
更快的读取速度，GB/s

20.9 10.4

测试中的平均数值
更快的写入速度，GB/s

15.8 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3200C16-16GRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 19
读取速度，GB/s

10.4 20.9
写入速度，GB/s

7.8 15.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2169 3801

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMV32GX4M1A2666C18 32GB

Corsair CMV32GX4M1A2666C18 32GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-4400C19-8GTZKK 8GB

G Skill Intl F4-4400C19-8GTZKK 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Kingston KHX2666C13D4/4GX 4GB

Kingston KHX2666C13D4/4GX 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMK16GX4M4B3600C18 4GB

Corsair CMK16GX4M4B3600C18 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3600C17-16GTZSW 16GB

G Skill Intl F4-3600C17-16GTZSW 16GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Kllisre M471A3243BB0-CP50 16GB

Kllisre M471A3243BB0-CP50 16GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

G Skill Intl F4-2400C15-16GIS 16GB

G Skill Intl F4-2400C15-16GIS 16GB