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Elpida EBJ10UE8BAFA-AE-E 1GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB vs Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

总分
star star star star star
Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分
star star star star star
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

差异 规格 评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB 需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB
报告一个错误
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB 需要考虑的原因
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 65
    左右 -86% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 4.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Elpida EBJ10UE8BAFA-AE-E 1GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 35
  • 读取速度，GB/s
    6.1 left arrow 16.8
  • 写入速度，GB/s
    4.2 left arrow 13.7
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    985 left arrow 3306

Elpida EBJ10UE8BAFA-AE-E 1GB RAM的比较

Corsair CM3X1G1600C9 1GB
Corsair CM4X8GF2666C16K8 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston KHX2666C13D4/4GX 4GB
Kingston KHX2666C13D4/4GX 4GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK16GX4M4B3600C18 4GB
Corsair CMK16GX4M4B3600C18 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3600C17-16GTZSW 16GB
G Skill Intl F4-3600C17-16GTZSW 16GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Kllisre M471A3243BB0-CP50 16GB
Kllisre M471A3243BB0-CP50 16GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
G Skill Intl F4-2400C15-16GIS 16GB
G Skill Intl F4-2400C15-16GIS 16GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Mushkin MR[A/B]4U360JNNM8G 8GB
Mushkin MR[A/B]4U360JNNM8G 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
SK Hynix HMA81GS6AFR8N-VK 8GB
SK Hynix HMA81GS6AFR8N-VK 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston HP32D4U8S8HC-8XR 8GB
Kingston HP32D4U8S8HC-8XR 8GB
内存RAM