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Crucial Technology CT51264BA1339.C16F 4GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Essencore Limited IM48GU88N26-GIIHA0 8GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Essencore Limited IM48GU88N26-GIIHA0 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
69
左右 61% 更低的延时
更快的写入速度,GB/s
8.4
7.7
测试中的平均数值
需要考虑的原因
Essencore Limited IM48GU88N26-GIIHA0 8GB
报告一个错误
更快的读取速度,GB/s
15.7
13.9
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
69
读取速度,GB/s
13.9
15.7
写入速度,GB/s
8.4
7.7
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2251
1831
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Essencore Limited IM48GU88N26-GIIHA0 8GB RAM的比较
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F2-8500CL5-2GBPI 2GB
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Samsung M393B1G70QH0-YK0 8GB
Corsair CMK64GX4M8X3600C18 8GB
SK Hynix HYMP112U64CP8-S6 1GB
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Corsair CMSO4GX3M1C1600C11 4GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Samsung M393A2G40EB1-CPB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
报告一个错误
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Bug description
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