RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2400C16-16GRS 16GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs G Skill Intl F4-2400C16-16GRS 16GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
G Skill Intl F4-2400C16-16GRS 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
37
左右 27% 更低的延时
需要考虑的原因
G Skill Intl F4-2400C16-16GRS 16GB
报告一个错误
更快的读取速度,GB/s
15.1
13.9
测试中的平均数值
更快的写入速度,GB/s
11.9
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2400C16-16GRS 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
37
读取速度,GB/s
13.9
15.1
写入速度,GB/s
8.4
11.9
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
2804
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
G Skill Intl F4-2400C16-16GRS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX1600C9D3/4G 4GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
Samsung M378B5273DH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Kingston 9965525-140.A00LF 8GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMD64GX4M8A2666C15 8GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Kingston KHX1866C10D3/8GX 8GB
G Skill Intl F4-3600C17-16GTZ 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CB8GS2400.C8ET 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Transcend Information TS2GLH64V1B 16GB
Kingmax Semiconductor KSCE88F-B8MO5 2GB
Kingston KF3200C20S4/32GX 32MB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD64GX4M4B2800C14 16GB
Samsung M3 93T5750CZA-CE6 2GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Samsung M378B5673EH1-CF8 2GB
Panram International Corporation D4N2666PS-16G 16GB
Kingston KHX318C10FR/8G 8GB
Samsung M393A1G40DB1-CRC 8GB
报告一个错误
×
Bug description
Source link