Samsung M471B5673FH0-CF8 2GB vs Corsair CMD64GX4M8A2666C15 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Corsair CMD64GX4M8A2666C15 8GB

Corsair CMD64GX4M8A2666C15 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 39

左右 23% 更低的延时

Corsair CMD64GX4M8A2666C15 8GB

需要考虑的原因
Corsair CMD64GX4M8A2666C15 8GB

报告一个错误

更快的读取速度，GB/s

13.7 10.6

测试中的平均数值
更快的写入速度，GB/s

11.9 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Corsair CMD64GX4M8A2666C15 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 39
读取速度，GB/s

10.6 13.7
写入速度，GB/s

6.8 11.9
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 3018

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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Avant Technology W641GU42J7240NC 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT16G4DFD8266.M16FJ 16GB

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Avant Technology J642GU44J2320ND 16GB

Avant Technology J642GU44J2320ND 16GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Kingston 9905598-044.A00G 16GB

Kingston 9905598-044.A00G 16GB

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Samsung M393B1K70QB0-CK0 8GB

Corsair CMD8GX4M2B3200C16 4GB

Corsair CMD8GX4M2B3200C16 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

SK Hynix HMA82GU6AFR8N-TF 16GB

SK Hynix HMA82GU6AFR8N-TF 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB