Crucial Technology CT51264BA1339.C16F 4GB vs G Skill Intl F4-3000C16-8GISB 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

G Skill Intl F4-3000C16-8GISB 8GB

G Skill Intl F4-3000C16-8GISB 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

G Skill Intl F4-3000C16-8GISB 8GB

需要考虑的原因
G Skill Intl F4-3000C16-8GISB 8GB

报告一个错误

更快的读取速度，GB/s

17 13.9

测试中的平均数值
更快的写入速度，GB/s

13.3 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3000C16-8GISB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.9 17.0
写入速度，GB/s

8.4 13.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3000C16-8GISB 8GB

G Skill Intl F4-3000C16-8GISB 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3000C15-8GVRB 8GB

G Skill Intl F4-3000C15-8GVRB 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Patriot Memory (PDP Systems) PSD48G213381S 8GB

Patriot Memory (PDP Systems) PSD48G213381S 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Samsung M386A4G40DM1-CRC 32GB

Samsung M386A4G40DM1-CRC 32GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3600C18-8GTRG 8GB

G Skill Intl F4-3600C18-8GTRG 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Corsair CM2X1024-6400 1GB

Corsair CM2X1024-6400 1GB

Corsair CMK64GX4M4B3200C16 16GB

Corsair CMK64GX4M4B3200C16 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB