Kingston KTC1G-UDIMM 1GB vs Samsung M386A4G40DM1-CRC 32GB

总分

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

总分

Samsung M386A4G40DM1-CRC 32GB

Samsung M386A4G40DM1-CRC 32GB

差异规格评论

差异

Kingston KTC1G-UDIMM 1GB

需要考虑的原因
Kingston KTC1G-UDIMM 1GB

报告一个错误

更快的读取速度，GB/s

4 10.3

测试中的平均数值

Samsung M386A4G40DM1-CRC 32GB

需要考虑的原因
Samsung M386A4G40DM1-CRC 32GB

报告一个错误

低于PassMark测试中的延时，ns

35 61

左右 -74% 更低的延时
更快的写入速度，GB/s

6.0 2,410.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Kingston KTC1G-UDIMM 1GB

Samsung M386A4G40DM1-CRC 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 35
读取速度，GB/s

4,230.0 10.3
写入速度，GB/s

2,410.6 6.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

754 1851

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Corsair CMK16GX4M2B3733C17 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Corsair CMK32GX4M2F4000C19 16GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB