Crucial Technology CT51264BA1339.C16F 4GB vs G Skill Intl F4-3200C14-16GTRG 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

G Skill Intl F4-3200C14-16GTRG 16GB

G Skill Intl F4-3200C14-16GTRG 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

G Skill Intl F4-3200C14-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTRG 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 -23% 更低的延时
更快的读取速度，GB/s

20.4 13.9

测试中的平均数值
更快的写入速度，GB/s

18.8 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3200C14-16GTRG 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 22
读取速度，GB/s

13.9 20.4
写入速度，GB/s

8.4 18.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 4382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

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Apacer Technology 78.CAGNK.4040B 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-4400C19-8GTZKK 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Crucial Technology CT16G4DFD8266.C16FE 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Samsung M471A5244BB0-CRC 4GB

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Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB

Crucial Technology CT25664AA800.M16FG 2GB

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Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Kingston KHX4000C19D4/8GX 8GB

Kingston KHX4000C19D4/8GX 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Corsair CMWX8GD3600C18W2D 8GB