RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
37
左右 27% 更低的延时
更快的读取速度,GB/s
13.9
10.4
测试中的平均数值
更快的写入速度,GB/s
8.4
7.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
37
读取速度,GB/s
13.9
10.4
写入速度,GB/s
8.4
7.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
2213
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMK16GX4M4A2800C16 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD R7416G2400U2S 16GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-4000C18-32GTZR 32GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9965600-011.A01G 16GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Kingston KHX1600C9D3/8G 8GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Gloway International (HK) STK4U2133D15081C 8GB
Kingston KHX2800C14D4/8GX 8GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston CBD26D4U9S8ME-8 8GB
Samsung M471B5273DH0-CK0 4GB
Samsung M471A1K43BB1-CRC 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M393A2G40EB1-CPB 16GB
报告一个错误
×
Bug description
Source link