Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs Micron Technology 8ATF1G64HZ-2G3B1 8GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

Micron Technology 8ATF1G64HZ-2G3B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 41

左右 -14% 更低的延时
更快的读取速度，GB/s

14.2 14

测试中的平均数值
更快的写入速度，GB/s

10.7 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 36
读取速度，GB/s

14.0 14.2
写入速度，GB/s

9.2 10.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2356 2474

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix V-GeN D4H4GL26A8TL 4GB

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Corsair CMD16GX4M4B3000C15 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

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Samsung M393B5270CH0-CH9 4GB

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G Skill Intl F4-3600C16-8GTZRC 8GB

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AMD R7S44G2606U1S 4GB

AMD R7S44G2606U1S 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

SK Hynix HMA81GR7AFR8N-VK 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB