Crucial Technology CT51264BA1339.C16F 4GB vs Kingston K6VDX7-HYD 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Kingston K6VDX7-HYD 8GB

Kingston K6VDX7-HYD 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时
更快的读取速度，GB/s

13.9 13.5

测试中的平均数值
更快的写入速度，GB/s

8.4 7.2

测试中的平均数值

Kingston K6VDX7-HYD 8GB

需要考虑的原因
Kingston K6VDX7-HYD 8GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Kingston K6VDX7-HYD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.9 13.5
写入速度，GB/s

8.4 7.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2251 2154

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology TEAMGROUP-UD4-3000 16GB

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Peak Electronics 256X64M-67E 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N

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AMD R5316G1609U2K 8GB

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Mushkin MRA4S320GJJM32G 32GB