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Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Micron Technology 8ATF1G64HZ-3G2R1 8GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Micron Technology 8ATF1G64HZ-3G2R1 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
51
左右 47% 更低的延时
需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2R1 8GB
报告一个错误
更快的读取速度,GB/s
15.8
13.9
测试中的平均数值
更快的写入速度,GB/s
12.5
8.4
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
51
读取速度,GB/s
13.9
15.8
写入速度,GB/s
8.4
12.5
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2251
2570
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
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Samsung M391B5273DH0-YK0 4GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
报告一个错误
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Bug description
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